WebDatasheet -production data Features 50% duty cycle, variable frequency control of resonant half bridge High accuracy oscillator Up to 500 kHz operating frequency Two-level OCP: frequency-shift and latched shutdown Interface with PFC controller Latched disable input Burst mode operation at light load WebVS-HFA15TB60-M3 www.vishay.com Vishay Semiconductors Revision: 16-Dec-2024 4 Document Number: 96191 For technical questions within your region: [email protected], [email protected], [email protected]
IRF540 Datasheet(PDF) - NXP Semiconductors
Web800V Single N-Channel HEXFET Power MOSFET in a TO-262 package. International Rectifier. 3. IRFBE30 PBF. 800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. International Rectifier. 4. IRFBE30 S. 800V Single N-Channel HEXFET Power MOSFET in a D2-Pak package. WebIRFBE30 Datasheet pdf - 800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package - International Rectifier RU Part name, description or manufacturer contain: Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA Up1 softwrench novasourcepower.com
Power MOSFET
WebIRFBE30 www.vishay.com Vishay Siliconix S21-0868-Rev. C, 16-Aug-2024 4 Document Number: 91118 For technical questions, contact: [email protected] THIS DOCUMENT IS … WebThis datasheet is subject to change without notice. ... Power MOSFET IRFBE30, SiHFBE30 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated •F ast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION WebGENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low … slows douala